Ag/HfO2-based Threshold Switching Memristor as an Oscillatory Neuron

Artificial neuron with low-power feature is critical for the implement of neuromorphic systems. In this work, Ag/HfO₂-based threshold switching memristor is used as an oscillatory neuron, due to its ultralow leakage current and small operation voltage. Low-temperature measurement is conducted to analyze the conduction mechanism. Furthermore, self-oscillation dynamics are investigated by simulation. The oscillation frequency is proportional to the input pulse voltage, which is suitable for performing neuronal functions (e.g., threshold, and fire).