Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks

In this letter, a new method based on the temperature dependence of gate leakage current for accurately characterizing thermal crosstalk is proposed and performed on the advanced silicon-on-insulator (SOI) MOSFETs. The developed technique enables to capture the pure thermal crosstalk effect as it excludes the self-heating impact during the measurement. Moreover, it is proven robust over a large range of gate voltages regardless of the difference of device types, which is demonstrated on a pair of devices with a shared port. The accuracy of the thermal crosstalk measurement benefits in determining the overall thermal performance of the nano-scaled circuits under the mutual heating impacts. It offers a possible hardware solution to thermal monitor and management.