Paralleling Silicon Carbide MOSFETs in Power Module for Traction Inverters: a Parametric Study

The high power demanding in many emerging power electronic applications requires innovative solutions in semiconductor field. One of the possible keys to satisfy this requirement is the use of more paralleled devices. For traction applications, parallel connection of Silicon Carbide (SiC) MOSFETs is widely employed. In this framework, the power devices are housed in module packages. This paper presents a parametric analysis of a SiC power module for traction inverters, with a three-phase topology, containing many paralleled dice for each swich. The scope of the work is to study this phenomenon with a numerical investigation based on a circuit simulation, evaluating the junction temperature in a case study. The parameters varied in the simulations are the threshold voltage and the drain-source on-state resistance.