Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/
${f}$
noise origin depending on the operation mode (
${p}$
- or
${n}$
-type FET mode) and current (
${I} _{\mathbf {O}}$
) region (low or high
${I} _{\mathbf {O}}$
region). Depending on the 1/
${f}$
noise origin, the effects of the program/erase (P/E) cycling differs. The
${n}$
-type mode GSD operating in the high
${I} _{\mathbf {O}}$
region whose 1/
${f}$
noise is originated from the carrier number fluctuation (CNF) shows the largest noise increase after the 10
⁴
P/E cycling.