COMPARISON BETWEEN HETERO-JUNCTION TECHNIQUE TFET AND CONVENTIONAL TFET

Field Effect Transistors (FET) and its bio sensing application is of keen interest to many researchers in today's era, because of the favourable circumstances that they offer regarding being viable with the todays CMOS innovation, scaling down, practical large scale manufacturing, and name free location measure also called label-free detection process. Tunnel Field Effect Transistors, are an emerging type of field effect transistors, which showcase characteristics like good short channel effects and reduction in leakage currents. They are a promising and efficient alternative of MOSFET, which can be used in many electronic devices. In this paper, existing TFET models are studied, Then an analytical model for a tunnel field-effect transistor (TFET) is developed and verified with device simulation results, using SILVACO ATLAS tool.