Photovoltaic properties of fluorine tin oxide (SnO/sub 2/:F)/silicon junctions prepared by electrostatic spray pyrolysis-dependence on oxidation time

Fluorine tin oxide (SnO/sub 2/:F)/silicon ( on both n and p type) junctions are prepared at 375/spl deg/C by a simple deposition technique called electrostatic spray prolysis (ESP). The SnO/sub 2/:F/p-Si yielded to an ohmic contact. The photovoltaic behavior of SnO/sub 2/:F/n-Si junctions as functions of oxidation time t/sub OX/ is reported in the present paper with the view to understanding the role of the interfacial oxide layer in the photovoltaic process. The junctions have been characterized by I(V) and C(V) measurements. A maximum efficiency of 6.2% is observed (under 80 mw.cm/sup -2/ illumination) of SnO/sub 2/:F/n-Si junctions at an oxidation time of 30s. The junctions are observed to be quite stable with time.