Investigation of Thermoelectric Properties for Ge2Sb2Te5 Thin Films Obtained by Magnetron Sputtering

In this work, thermoelectric properties of Ge
₂
Sb
₂
Te
₅
thin films obtained by magnetron sputtering were investigated. Deposition was carried out at room temperature, the thickness of the films was 500 nm. The resistivity, Seebeck coefficient and thermal conductivity of thin films were measured. The resistivity of as-deposited layers was about 3500 Ohm·cm and dropped sharply after annealing at a temperature of 260°C for 30 minutes, which is due to the phase transition of the material. The Seebeck coefficient for the as-deposited films was about 1000 μV/K, and the thermal conductivity was 0.16 W/(m·K). It has been established that the highest power factor of 0.13 mW/(m·K
²
) have Ge
₂
Sb
₂
Te
₅
thin films heat treated at 260°C.