Designing the 14GHz Balanced Inverse Class F Power Amplifier with GaN HEMT

This paper presents the high-efficiency balanced inverse class F power amplifier using GaN High Electron Mobility Transistor (HEMT). In the circuit design, used the microstrip line couplers for power dividing and combining. The power amplifier is designed to operate at 14 GHz. The power amplifier with microstrip branch-line coupler provides the power added efficiency (PAE) 63.2% and output power 28.6 dBm while second harmonics impedances tuning. The amplifier was designed by using Microwave Office (AWR) with the model (EEHEMT) for the transistor.