Quasi-static I-V characterization utilized for isothermal and thermal parameters comparison in InAlN/GaN or AlGaN/GaN HEMTs

This work deals with the average temperature model of two AlGaN/GaN HEMTs exhibiting similar thermal but different electrical properties. Output I-V characteristics dependent on isothermal and thermal device properties allow comparison of output conductance and current temperature sensitivity of both devices. Nevertheless thermal gradient and dissipated power density variation in the active device area give the model some restrictions. However more input thermal parameters bring availability to perform more accurate calculations.