The Schottky barrier detectors based on 4H-SiC epitaxial layer

In this paper we have focused on characteristics of detectors based on 4H--SiC semiconductor. The typical thickness of the active layer was between 25 ,pan and 100 jim. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward currentvoltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V The doping concentration profile was calculated. The obtained concentration of doping was below 1 x 1014 cm 3. The detection properties of 4H--SiC particle detector were tested using two radioisotopes: 241Am and 23813u.