Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

We are introducing Deep Level Transient Spectroscopy (DLTS) results, carried out on semi-vertical GaN-on-Si trench-MOSFET structures. Parameters of ten deep energy levels were identified. Four of these are electron-like and three hole-like. Another three levels with activation energies 0.21, 0.29 and 0.66 eV were indeterminable because it was not possible to identify the layer origin of these emission processes. The presence of defect states consistent with surface localizations (0.8 eV) and dislocations (0.3 eV) was confirmed.