Micro Humidity Sensor Based on a GaN Chip With Silica Opal

The fabrication of a micro humidity sensor based on a GaN chip with silica opal is reported. The GaN chip containing InGaN/GaN multi-quantum well provides the two key functions of light emission and detection and the emitted light can be directly coupled into and out of the humidity-sensitive opal through the transparent sapphire substrate. The novel chip-scale integration scheme fully eliminates the complex assembly of external optical elements. The measured photocurrent signal quantitatively reflects the humidity change and has a linear relation of 0.24 μA/% over a wide humidity range of 10-90 %. The developed micro-sensor possesses the advantages of compact size, low cost, high repeatability, and ease of integration and operation, which paves the way for its widespread adoption in humidity sensing.