Electronic properties of Ge/2D-GaP heterobilayer: A first-principles investigation

ln this paper, we demonstrated geometric construction and electronic properties of Germanene/2D-GaP (Ge/2D-GaP) heterobilayer utilizing first-principles calculation. We found that the formation of Ge12D-GaP results in a directly opened band gap of 85.6, meV at the Γ-point. Our calculation of the charge density difference between the germanene and 2D-Gal layer and the partial density of states confirmed the germanene as the property builder of the heterostructure. The variation in interlaver distances between the bilayer demonstrated tunable bandgap property. We observed both direct and indirect band bandgap through the process and find very high electron mobility of 13.2x10⁴ cm²V^-1s^-1. The electronic properties of the Ge/12D-GaP heterubilaver stood as a viable option to further investigate its application in the field of nanoelectranic storage devices and mino-piezoelectric generators.