Simulation of the strain effect in the p-Ge/sub 1-x/Si/sub x/ of kinetic factors

The strain effect should be taken into consideration for calculation of the kinetic factors and evaluation of characteristics of the Ge/sub 1-x/Si/sub x/ pressure sensors. For the calculation of the piezoresistance it is necessary to take into consideration the spin-orbital zone and to use the three-region model of spectrum. In this paper the temperature dependencies of the drift mobility, the piezoresistance factors, the relative resistivity as functions of strain are calculated for the case of x=0 (Ge) under the various concentrations of impurity.