Electrical properties of thin film structures on the base of La doped semiconductor glass

The performed research has shown that thin films of amorphous materials can be employed for creating structures with controlled NDR region of I-V characteristics by use of double injection effect. Experiments were carried out on the layer structures "glassy substrate-ITO-film As/sub 2/Se/sub 3/:La". Structures on their base on non-crystalline substrates can be used both for storage and processing of electrical and optical signals. The latter is of importance for control circuits of any display.