Evolution of porous surfaces Si[111] and Si[100] during annealing and epitaxy processes (simulation)

Simulation of high temperature annealing process on porous Si[111] and Si[100] surfaces using a 3D Monte Carlo model was carried out. Distinct relief is formed over sealing pores due to the difference in surface diffusion on these surfaces. A smooth solid layer is formed on [111] surface whereas pyramidal pits faceted by [111] planes are created over pores on [100] surface. These pits need long annealing time for smoothing. On [100] surfaces the relief evolution takes place in the epitaxial layer as well. The dose necessary for complete pore sealing of different sizes at various deposition rates was obtained on [100] surface.