Impact of Design on High Frequency Performances of Advanced MIM Capacitors Using SiN Dielectric Layers

High frequency characterizations of ultra thin 32 nm PECVD Si
3
N
4
dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates. The frequency dependent behavior of capacitance is extracted over a wide frequency bandwidth. An equivalent circuit model of capacitors including four parameters is developed to explain this behavior. Results are compared to values obtained by 3D Electro-Magnetic modeling.