Low Noise and High Gain RF MOSFETs on Plastic Substrates

A low minimum noise figure (NF
min
) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 µm RF MOSFETs on plastic, made by substrate thinning (~30 µm), transfer and bonding. The performance can be further improved to 0.96 dB NF
min
and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.