Fabrication and Characterization of InGaAs Zero Bias SBD and Detector with T-gate Anode

A zero bias Schottky barrier diode with 3.5THz cut-off frequency and 0.16eV barrier height based on the InGaAs-Ti contact is designed and fabricated with a new T-gate anode, anisotropic wet mesa etch and BCB protection process. By using this SBD, a high-sensitivity detector working at W band frequency is proposed, and the measured responsivity is over 4000V/W at 75~110GHz.