Ramifications of Pulsed Laser Deposition Growth Temperature on BaHfO3 and Y2O3 Doped Y-Ba-Cu-O Thin Films’ Microstructure and Performance

Deposition temperature is an important parameter to control in pulsed laser deposition of thin films, as it affects the ad-atom mobility and diffusion in regards to film growth. Increased growth temperature can also result in increased stacking fault densities in YBa
₂
Cu
₃
O
_7-δ
(YBCO) films. This research investigates the influence of deposition temperature on the critical current density and the microstructure of YBCO thin films double doped with BaHfO
₃
and Y
₂
O
₃
. A KrF excimer laser was used to produce thin films of YBCO doped with 4 vol. % BaHfO
₃
and 3 vol. % Y
₂
O
₃
on LaAlO
₃
(LAO) substrates at various deposition temperatures from 790-825 °C. The growth temperature influence on the flux pinning landscape and J
_c
(H,T,θ) properties (T = 5-77 K, H = 0-9 T, θ = 0-180°) of these films will be presented.