An X-band silicon carbide IMPATT diode

IMPact-ionization-Avalanche-Transit-Time (IMPATT) diodes are widely used as microwave sources in transmitters in pulsed radar systems. Under pulsed conditions, the peak output power of an IMPATT diode at a given frequency is limited by its underlying material properties. Due to the high breakdown field and high electron saturation velocity of silicon carbide (SiC), a SiC IMPATT diode is expected to produce microwave power at least 100 times higher than Si or GaAs IMPATT diodes. We reported the first demonstration of a SiC IMPATT diode last year. In this work, the microwave characteristics of the diode are presented.