Spin-orbit interaction of 2/spl deg/ in InAlAS/InAs heterostructures

Summary form only given. We report the transport characterization of In/sub 0.8/Al/sub 0.2/As/InAs heterostructures grown on p-type InAs substrate. Shubnikov de Haas oscillation of the InAs surface inversion layer was successfully measured by improved heterointerface quality and reduced interband tunneling current. As a result, spin-orbit interaction was estimated through Rashba oscillation.