A quantum dot FET-a future playground of quantum state manipulation

We report a novel functional transistor which yields drain current peaks according to a dot-confined energy-states (shell structures) by scanning gate voltage and/or external magnetic field by controlling the interplay between charging energy and the dot confined energy states. Remarkable result is that the average "single-dot" energy states were resolved despite the inhomogeneous variations of the quantum dot ensemble. It would lead to an FET which manage to control quantum states in a "average quantum dot" state by normal FET operation of gate and drain voltage control.