Characterization of a 0.1 /spl mu/m MOSFET using cross-sectional scanning tunneling microscopy

A MOSFET structure was visualized in a nanometer scale using STM. Topographic STM images show the source/drain (S/D) regions, the poly-Si gate, and the very thin gate oxide layer on a nanometer scale. The results show that STM is a powerful technique to determine the depth of the S/D, the channel length, and the local carrier concentration.