Si/sub 1-x/Gex channel vertical PMOSFET with asymmetric Ge profile

Describes a vertical PMOSFET with an asymmetric Si/Si/sub 1-x/Ge/sub x/ channel . On the source side, the channel is made of Si, so the short channel performance is not degraded compared with a Si device. The rest of the channel is made of strained Si/sub 1-x/Ge/sub x/. and we still can take advantage of the high hole mobility in the strained Si/sub 1-x/Ge/sub x/ layer. The energy step in the channel increases the lateral electric field near the source and helps with carrier injection from the source to the channel. Ultra-high vacuum chemical vapor deposition (UHV-CVD) was used to grow the device layers with in situ doping.