Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode

In this article, we demonstrate a high-performance Pt/NbO
_x
/Ru selector based on metal-insulator transition (MIT), which exhibits low leakage current ( 5.67×10
^-5
A/cm
²
), excellent endurance (>10
⁶
), and ultrahigh uniformity (<;2.5%) in particular and performs great potential to achieve 3-D storage integration. Furthermore, the decrease of the threshold voltage drift and the improvement of stability can be interpreted as the formation of RuO
₂
layer at the interface between Ru electrode and oxide layer. The application of Ru in selector provides the industry with a choice to enhance the uniformity and stability.