Sub-10mK-Resolution Thermal-Bolometric Integrated FET-Type Sensors Based on Layered Bi2O2Se Semiconductor Nanosheets

In this work, we reported high-sensitivity thermal- bolometric integrated transistor sensors based on the layered Bi
₂
O
₂
Se nanosheets for the first time, wherein the temperature- promoted ionization of selenium vacancies and the ultrahigh in-plane electron mobility were demonstrated to yield a recordhigh temperature resolution of 1.5 mK. And the integrated sensors simultaneously detected the thermal, photoconductive, and bolometric stimuli with outstanding performances including the temperature sensitivity of 4.6 %K
^-1
, the bolometric coefficient of 41.8 μA/K, the bolometric response of >3300 A/W, and the working range of 30-200 °C. Furthermore, the stochastic resonance decoupling model was proposed to extract the coupled signals by amplifying signals through the coherent energy transferring from the imbedded noises.