Performance of a 1030 nm driven ErAs: InGaAs photoconductive receiver at high THz average power

We demonstrate a 1030 nm 520 fs-pulse-driven ErAs: InGaAs photoconductive receiver suitable for detecting 14 mW average THz power (~ 950 nJ pulse energy). To the knowledge of the authors, this is the highest detected pulsed THz power using photoconductive receivers reported so far. The current (field) responsivity of this receiver is in the range of 110±25μA/√W yet with slight saturation.