Physically Transient Diode With Ultrathin Tunneling Layer as Selector for Bipolar One Diode-One Resistor Memory

Herein, physically transient diode based on W/ZnO/MgO/W device with ultrathin MgO tunneling layer as selector for bipolar one diode-one resistor (1D1R) memory was demonstrated. By modulating thickness of MgO tunneling layer, the diode of ultrathin MgO (3 nm) tunneling layer exhibits stable rectifying behaviors, good endurance, high uniformity and a suitable reverse current. Meanwhile, the self-rectifying resistance switching functions of bipolar 1D1R memory that utilize reverse current of diode as compliance current are successfully obtained, which can suppress the sneak current of crossbar network. Importantly, the electrical feature of the transient 1D1R memory degraded after being immersed in deionized water (DI) for 1 min and completely triggered failure after 2 min. These results reveal that the transient 1D1R memory is promising for secure memory, neuromorphic computing and novel bio-integrated electronics systems.