HOT MWIR Detector Development with InAs/InAsSb T2SL nBn Structure

High operating temperature (HOT) infrared device plays a key role in decreasing the size, weight and power consumption (SWaP) of the infrared system. HOT detector enables miniaturization of the detector and longer lifetime of cooler. To realizing HOT infrared detector with
$15\ \mu\mathrm{m}$
pitch video graphics array (VGA), we studied InAs/InAsSb T2SL nBn device. The fabricated focal plane arrays and detector exhibited the dark current characteristics and optical performance capable of operating from 80 to 140 K, respectively.