Quantifying the Contribution of Dynamic Reactive Power Compensators on System Strength at LCC-HVdc Converter Terminals

This paper presents improved indices to evaluate the contribution of reactive power compensators at HVdc converter terminals. The presence of such compensators impacts converter performance, such as the maximum available power (MAP) limit, susceptance to commutation failure, fault recovery time and temporary over voltage. Traditionally, the Effective Short Circuit Ratio (ESCR) has been used to indicate system strength. However, this index cannot be directly applied when power-electronics based converters are used to provide the reactive power support. The approach of this paper is to use an improved form of the ‘Apparent increase in Short Circuit Ratio’ (AISCR) index to quantify the impact of the compensator on the HVdc system. This index is evaluated by comparing the performance with the reactive power device with a system without the device, but having the same performance. The paper shows that a single AISCR index cannot quantify all behaviors and suggest modifications to AISCR for each of several HVdc phenomena. In this paper two types of compensators are considered – the Synchronous Compensator and the Static Synchronous Compensator (STATCOM).