Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

We report on achieving high-performance β-Ga
₂
O
₃
power devices through the incorporation of the p-type NiO
_x
. β-Ga
₂
O
₃
p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the BV. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance (R
_on,sp
) of 1220 V/1.08 mΩ · cm
²
and 1115 V/3.19 mΩ ·cm
²
, respectively. Therefore, the P-FOM which is defined as the BV
²
/R
_on,sp
is yielded to be 1.38 GW/cm
²
and 0.39 GW/cm
²
for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga
₂
O
₃
, these findings show significant insights on the development of Ga
₂
O
₃
power devices and offer great promises of implementing p-NiO
_x
in boosting the Ga
₂
O
₃
power device performances.