Pseudo-MOSFET transient behavior: experiments, model, substrate and temperature effect

A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in high frequency deep-depletion state. The model can be used for the extraction of carrier lifetime. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (intrinsic carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 350 K.