Schottky-Barrier FET Ultra-Low-Power Diode

In this paper, for the first time, we apply the ultra-low-power (ULP) diode concept with Schottky Barrier (SB) transistors and analyze the performance in comparison to standard CMOS, using calibrated TCAD mixed-mode simulations. The negative impedance characteristics obtained in reverse mode with SB devices are shown to offer superior current performance compared to CMOS, especially as a function of temperature.