Correlation between the NBTI Effect and the Interface Traps Density in Junctionless Nanowire Transistors

This paper deals with the behavior of degradation by NBTI effect in MOS junctionless nanowire transistors (JNTs). The analysis has been performed through experimental measurements followed by 3D numerical simulations and has shown that the increase in the number of traps close to the interface leads to the saturation in the NBTI effect, which can be correlated to the operation regime of the devices. When the devices operate in partial depletion due to the threshold voltage reduction, ΔVTH tends to saturate.