Vmin Prediction for Negative Capacitance MOSFET based SRAM

In this work we show that SRAM cells designed using negative capacitance (NC) based MOSFETs (NCFETs) can offer improved V
_min
(minimum supply voltage needed for reliable operation) compared to conventional MOSFET based SRAM. Increased noise margins and reduced variability in NCFETs lead to this lowering of V
_min
. For this work we use a modified version of the standard BSIM4 compact model for bulk MOSFETs by coupling it with the Landau-Khalatnikov model of ferroelectrics in a self-consistent manner, while the statistical variability information of the reference device is extracted from 3D statistical TCAD simulations.