Thermal Cross-Coupling Effects Analysis in UTBB Transistors

The main goal of this work is to perform an analysis for the first time of the thermal cross-coupling of a self-heated device on a neighbor device in advanced UTBB SOI MOSFETs through 2D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the self-heating of a device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 μm to 25 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase of more than 50% in the thermal resistance.