Accuracy of Contact Resistivity Measurements for Electron-Selective Titanium Oxide Contacts in n-Type c-Si Solar Cell

Contact resistivity quantifies the charge transport barrier, which is one of the key parameters for choosing the carrier selective contact for silicon solar cells. Optically transparent and electrically selective contacts such as transition metal oxide (TMO)-based contacts are employed in solar cell applications. Therefore, the extraction of contact resistivity for such Schottky contacts requires apposite validation. In this article, we have extracted the contact resistivity of TiO
_x
/LiF
_x
/Al stack over n-type c-Si wafer using two conventional techniques: 1) Shockley's transfer length method (TLM) and 2) Cox and Strack method (CSM). The extracted contact resistivity is validated by comparing with the solar cell's contact resistivity (true contact resistivity) and fill factor (FF). We found that TLM overestimates the contact resistivity for highly resistive TiO
_x
films, due to the asymmetrical nature of the TMO barrier and correlated with the reported experimental data. In contrast, CSM extracts more accurate contact resistivity for TiO
_x
contacts when total resistance is extracted closer to the J
_mpp
(38 mA cm
^-2
). Besides, we recommend including the passivating layer along with the contacts (in the case of passivating contacts) to extract the actual contact resistivity felt by the solar cell.