Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.