Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

In this work, the physical and electrical properties of TaSi/sub x/N/sub y/ films are evaluated for gate electrode applications. MOS capacitors with TaSi/sub x/N/sub y/ gates of varying N concentrations were fabricated. The stability of TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks was studied at annealing temperatures of 700/spl deg/C, 900/spl deg/C, and 1000/spl deg/C in Ar. When the nitrogen content exceeds 35 at%, excellent stability of oxide thickness and gate current is observed for anneals up to 1000/spl deg/C. The results also indicate that the work function of TaSi/sub x/N/sub y/ is compatible with NMOS devices.