100 V trench MOS barrier Schottky rectifier using thick oxide layer (TO-TMBS)

We are the first to fabricate a 100 V class low V/sub F/ TMBS with V/sub B/=107 V, J/sub R/=8/spl times/10/sup -5/ A/cm/sup 2/ at V/sub R/=90 V and V/sub F/=0.63 V at J/sub F/=180 A/cm/sup 2/. This was accomplished by using a deep trench gate, a thick oxide layer (=0.8 /spl mu/m) along the trench and a high carrier concentration (=1/spl times/10/sup 16/ cm/sup -3/) uniformly doped wafer. The relationships between breakdown voltage, oxide thickness and carrier concentration were studied and our conclusions are presented in this paper. We call this SBD the Thick Oxide TMBS (TO-TMBS). With the TO-TMBS, we have reduced V/sub F/ by 17% compared to the conventional SBD.