0.6 /spl mu/m BiCMOS based 15 and 25 V LDMOS for analog applications

In the present paper, we report the development of complementally 25 V LDMOS, 15 V n-ch LDMOS, 18 V npn/pnp and 5 V CMOS. The developed LDMOS achieved high on-state breakdown voltages for the gate voltage of 5.0 V. The on-resistance values of the developed 15 V and 25 V n-ch LDMOS achieves 22.7 and 27.5 mn mm/sup 2/, respectively. The characteristics of bipolar transistors and CMOS are also sufficiently good.