Thin Film Lithium Niobate Electro-Optic Modulator for 1064 nm Wavelength

Electro-optic modulators are used in a wide variety of photonic systems, and their operation at the 1064 nm wavelength is notable for its applications such as frequency comb generation and optical interconnects. This work demonstrates the first (to the best of our knowledge) thin film lithium niobate electro-optic modulator operating at a wavelength of 1064 nm. The modulator was fabricated from crystal-ion-sliced lithium niobate wafers procured from NanoLN. Electron beam lithography was used to define the waveguides, and laser lithography was used to define the electrodes, forming a ridge waveguide in the lithium niobate, with a width of 900 nm and an etch depth of 90 nm, by inductively coupled plasma etching. The modulator was characterized using a polarization rotation technique, in which two modes of the waveguide were excited and both were shown to exhibit phase modulation. This modulator exhibits a half-wave voltage of 2.73 volts, with a 7 mm long interaction region and 1.91 V-cm modulation efficiency.