Massively Parallel Fully Coupled Simulation of Semiconductor Device Based on Newton-Krylov Method

This paper presents the study of massively parallel fully coupled simulation of semiconductor device based on Newton method. The coupled system is comprised of Poisson equation for the electric potential, and two continuous equations using the constitutive relationship of the drift-diffusion model for the electron and hole concentration. The governing PDEs are discretized in space by a vertex control volume Finite volume method, and integrated in time by the backward Euler implicit method. Solution of the system is obtained by a fully-coupled Newton nonlinear solver, which a BCGSTAB Krylov linear solver with the Additive Schwarz domain decomposition preconditioner is used in each Newton iteration. The program is developed based on JASMIN-platform, named JEMS-CDS-Device. The parallel test results are presented for solution of up to 14 million grid cells scale problem on 16,384 processor of a computer cluster.