Investigation of Dual-Material Double Gate Junctionless Accumulation-Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with High-k Gate Stack for low Power Digital Applications

In this paper, investigation of an improved structure of a Junctionless Accumulation Mode (JLAM) MOSFET is done. Using the advantages of both the Gate Stack Engineering and dual material engineering, a Dual-Material Double Gate Junctionless Accumulation Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with a high-k gate stack, a novel structure is proposed. The impact of dual gate and stacked oxide is investigated. The simulation of this device is performed on ATLAS 3-D device simulator. The analytical study of this device has also been done on MATHCAD and the results are verified with the results that are obtained after simulation. Various electrical parameters of this device have been obtained. This device exhibits an excellent subthreshold swing of 67 mV/ decade.