Accurate prediction of deep submicron CMOS device characteristics using inverse modeling techniques

This work presents a very simple and predictive technology CAD (TCAD) calibration methodology, which employs inverse modeling to support and enhance process technology development. In this paper we describe the way in which TCAD tools are calibrated using physical, current-voltage (I-V) and capacitance-voltage (CV) measurements only. The methodology is applied to sub-nominal dimensions to illustrate its ability to predict device characteristics. The predictability of the calibrated deck is then demonstrated in the analysis of sub nominal device dimensions.