Design and Characterization of a Ka Band 40 W RF Chain Based on GH15-10 GaN Technology for Space Solid State Power Amplifier Applications

This paper discusses the design, realization and performance characterization of a 40 W Ka band RF chain developed for space SSPA applications, and based on a custom High Power Amplifier (HPA) developed on the new 0.15 μm gate length GaN technology on SiC substrate. The use of an analog linearizer for improving the HPA linearity is also discussed.