140-190 GHz Broadband Amplifier in 300-nm InP/GaAsSb DHBT Technology

InP/GaAsSb-based Double Heterojunction Bipolar Transistors (DHBTs) with an excellent combination of high f
_MAX
(> 650 GHz) and high breakdown voltage (> 5 V), are promising candidates for mm- and sub-mm-wave applications. In this work, we present a 300-nm InP/GaAsSb DHBT technology for monolithic millimeter-wave integrated circuit (MMIC) design. Using this technology, a broadband one-stage cascode amplifier exhibiting a small-signal gain ~ 7.2 dB from 140 to 190 GHz with a 3-dB bandwidth of more than 56 GHz was achieved.