250 GHz SiGe SPDT Resonator Switch

This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-μm SiGe BiCMOS technology with f
_t
/f
_max
of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.