Over 40W, X-Band GaN on SiC MMIC Amplifier

In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment.